POSITIVE RESIST MATERIAL REQUIREMENTS FOR VLSI DEVICE FABRICATION. IIELLIOTT DJ.1982; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1982; VOL. 25; NO 12; PP. 91-95; BIBL. 11 REF.Article

ELIMINATION DES IMPURETES MINERALES DES RESISTANCES PHOTOSENSIBLES PAR LA CATIONITE KU-2 X 8MIRONOV MS; TAUSHKANOV VP; MARKOVA TP et al.1981; Z. PRIKL. HIM.; ISSN 0044-4618; SUN; DA. 1981; VOL. 54; NO 10; PP. 2321-2323; BIBL. 3 REF.Article

DETAILED CONTRAST (GAMMA -VALUE) MEASUREMENTS OF POSITIVE ELECTRON RESISTSHARADA K; TAMAMURA T; KOGURE O et al.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 11; PP. 2576-2580; BIBL. 10 REF.Article

CHARACTERIZATION OF AZ-2415 AS A NEGATIVE ELECTRON RESISTBERKER TD; CASEY DD.1982; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1982; VOL. 17; NO 2; PP. 154-160; BIBL. 7 REF.Article

OPTICAL REQUIREMENTS FOR PROJECTION LITHOGRAPHYOLDHAM WG; SUBRAMANIAN S; NEUREUTHER AR et al.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 10; PP. 975-980; BIBL. 17 REF.Article

CHARACTERIZATION OF POSITIVE RESIST DEVELOPMENTO'TOOLE MM; GRANDE WJ.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 12; PP. 311-313; BIBL. 8 REF.Article

POSITIVE RESIST MATERIAL REQUIREMENTS FOR VLSI DEVICE FABRICATIONELLIOTT DJ.1982; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1982; VOL. 25; NO 5; PP. 116-120Article

PLASMA FORMATION OF BUFFER LAYERS FOR MULTILAYER RESIST STRUCTURESDOBKIN DM; CANTOS BD.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 9; PP. 222-224; BIBL. 10 REF.Article

CHARACTERIZATION OF AZ-2415 AS A NEGATIVE ELECTRON RESISTBERKER TD; CASEY DD.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 4; PP. 524-530; BIBL. 7 REF.Article

CMS GIVES IMPACT ON DRY ETCHING PROCESS IN VLSI PRODUCTIONFUKUDA M.1982; JEE, J. ELECTRON. ENG.; ISSN 0385-4507; JPN; DA. 1982; VOL. 19; NO 188; PP. 40-43; BIBL. 10 REF.Article

MASK CONSIDERATIONS IN THE PLASMA ETCHING OF ALUMINUMTRACY CJ; MATTOX R.1982; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1982; VOL. 25; NO 6; PP. 83-88; BIBL. 13 REF.Article

A DRY DEVELOPMENT MODEL FOR A POSITIVE ELECTRON BEAM RESISTYAMADA M; HATTORI S; MORITA S et al.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 11; PP. 2598-2602; BIBL. 22 REF.Article

PROXIMITY FUNCTION CALCULATION OF PATTERNS IN POSITIVE ELECTRON RESISTSBRANDT J; LAI JH; SHEPHERD LT et al.1981; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1981; VOL. 10; NO 5; PP. 813-822; BIBL. 12 REF.Article

PROXIMITY-EFFECT CORRECTION FOR NEGATIVE RESIST IN ELECTRON BEAM LITHOGRAPHYMACHIDA Y; FURUYA S; NAKAYAMA N et al.1983; FUJITSU SCIENTIFIC AND TECHNICAL JOURNAL; ISSN 0016-2523; JPN; DA. 1983; VOL. 19; NO 1; PP. 21-32; BIBL. 9 REF.Article

PROPERTIES OF A HIGH RESOLUTION NEGATIVE PHOTORESISTNEISIUS K; MERREM HJ.1982; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1982; VOL. 11; NO 4; PP. 761-778; BIBL. 5 REF.Article

CHEMICAL IMPURITIES AND STRUCTURAL IMPERFECTIONS IN SEMICONDUCTOR SILICON. IHUFF HR.1983; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1983; VOL. 26; NO 2; PP. 89-95; BIBL. 43 REF.Article

CROSSLINKING OF POLYMERS WITH IRRADIATING RH, LALPHA X RAY-EFFECT OF ACTIVE GROUPS AND A HEAVY ATOM ON CROSSLINKINGYAMAOKA T; TSUNODA T; GOTO Y et al.1979; PHOTOGR. SCI. ENGNG; USA; DA. 1979; VOL. 23; NO 4; PP. 196-202; BIBL. 14 REF.Article

PROCESS CONTROL OF THE CHLOROBENZENE SINGLE-STEP LIFTOFF PROCESS WITH A DIAZO-TYPE RESISTCOLLINS GG; HALSTED CW.1982; IBM JOURNAL OF RESEARCH AND DEVELOPMENT; ISSN 0018-8646; USA; DA. 1982; VOL. 26; NO 5; PP. 596-603; BIBL. 7 REF.Article

PATTERN SIZE DEPENDENCE OF SENSITIVITY OF INORGANIC SEGE/AG RESISTFUNAKOSHI N; FUJIMORI S; ZEMBUTSU S et al.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 1; PP. L40-L42; BIBL. 7 REF.Article

EFFET DE L'ATTAQUE DES COUCHES POSITIVES ET X LORS D'UN BOMBARDEMENT PAR DES IONS D'ENERGIE MOYENNEVALIEV KA; DANILOV VA; PESHEKHONOV SV et al.1983; MIKROELEKTRONIKA; ISSN 0544-1269; SUN; DA. 1983; VOL. 12; NO 3; PP. 195-199; BIBL. 8 REF.Article

DEEP U.V. HARDENING OF POSITIVE PHOTORESIST PATTERNSALLEN R; FOSTER M; YUNG TSAI YEN et al.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 6; PP. 1379-1381; BIBL. 9 REF.Article

SELF-ALIGNED ION IMPLANT MASKING FOR CMOS VLSI TECHNOLOGYPIMBLEY JM; GHEZZO M.1982; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 4; PP. 99-100; BIBL. 7 REF.Article

FREE-STANDING PHOTORESIST FILMS FOR MICROLITHOGRAPHYLITTLE JW; CALLCOTT TA; ARAKAWA ET et al.1980; REV. SCI. INSTRUM.; ISSN 0034-6748; USA; DA. 1980; VOL. 51; NO 11; PP. 1581-1583; BIBL. 3 REF.Article

POSITIVE AND NEGATIVE TONE NEAR-CONTACT PRINTING OF CONTACT HOLE MASKINGSWHITE LK.1982; RCA REVIEW; ISSN 0033-6831; USA; DA. 1982; VOL. 43; NO 2; PP. 391-411; BIBL. 24 REF.Article

THE MECHANISM OF SINGLE-STEP LIFTOFF WITH CHLOROBENZENE IN A DIAZO-TYPE RESISTHALVERSON RM; MACINTYRE MW; MOTSIFF WT et al.1982; IBM JOURNAL OF RESEARCH AND DEVELOPMENT; ISSN 0018-8646; USA; DA. 1982; VOL. 26; NO 5; PP. 590-595; BIBL. 13 REF.Article